SI O COMPOUND FORMATION BY OXYGEN ION-IMPLANTATION INTO SILICON

[1] STUDY OF SILICON-OXIDES PREPARED BY OXYGEN IMPLANTATION INTO SILICON [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (14) : 1931 - 1942

[2] ACTIVATION-ENERGY ASSOCIATED WITH THE ANNEALING OF BURIED IMPLANTED OXIDES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 3193 - 3194

[3] FORMATION OF THIN SIO2-FILMS BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON AND THEIR INVESTIGATION BY IR TECHNIQUES [J]. THIN SOLID FILMS, 1976, 35 (03) : 327 - 336

[4] STUDIES OF THE SI/SIO2 INTERFACE BY ANGULAR DEPENDENT X-RAY PHOTO-ELECTRON SPECTROSCOPY [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (02): : 505 - 517

[5] ION IMPLANTATION AND ANNEALING EFFECTS IN SIO2 LAYERS ON SILICON STUDIED BY OPTICAL MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) : 1243 - +

[6] RUTHERFORD BACKSCATTERING ANALYSIS OF OXIDE LAYERS FORMED BY ION-IMPLANTATION INTO SINGLE-CRYSTAL SILICON [J]. THIN SOLID FILMS, 1978, 55 (03) : 435 - 448

[7] GUSEV WM, 1971, RADIOTEKHNIKA ELEKTR, V16, P1462

[8] TEM, AES AND XPS STUDIES OF SI LAYER ON BURIED SIO2 LAYER FORMED BY HIGH-DOSE OXYGEN ION-IMPLANTATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : 1111 - 1116

[9] FLASH LAMP ANNEALING OF ION-IMPLANTED SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 63 (1-4): : 115 - 123

[10] DECOMPOSITION OF SIOX FILMS DUE TO INTERNAL-STRESS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (01): : 239 - 244

[1] STUDY OF SILICON-OXIDES PREPARED BY OXYGEN IMPLANTATION INTO SILICON [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (14) : 1931 - 1942

[2] ACTIVATION-ENERGY ASSOCIATED WITH THE ANNEALING OF BURIED IMPLANTED OXIDES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 3193 - 3194

[3] FORMATION OF THIN SIO2-FILMS BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON AND THEIR INVESTIGATION BY IR TECHNIQUES [J]. THIN SOLID FILMS, 1976, 35 (03) : 327 - 336

[4] STUDIES OF THE SI/SIO2 INTERFACE BY ANGULAR DEPENDENT X-RAY PHOTO-ELECTRON SPECTROSCOPY [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (02): : 505 - 517

[5] ION IMPLANTATION AND ANNEALING EFFECTS IN SIO2 LAYERS ON SILICON STUDIED BY OPTICAL MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) : 1243 - +

[6] RUTHERFORD BACKSCATTERING ANALYSIS OF OXIDE LAYERS FORMED BY ION-IMPLANTATION INTO SINGLE-CRYSTAL SILICON [J]. THIN SOLID FILMS, 1978, 55 (03) : 435 - 448

[7] GUSEV WM, 1971, RADIOTEKHNIKA ELEKTR, V16, P1462

[8] TEM, AES AND XPS STUDIES OF SI LAYER ON BURIED SIO2 LAYER FORMED BY HIGH-DOSE OXYGEN ION-IMPLANTATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : 1111 - 1116

[9] FLASH LAMP ANNEALING OF ION-IMPLANTED SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 63 (1-4): : 115 - 123

[10] DECOMPOSITION OF SIOX FILMS DUE TO INTERNAL-STRESS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (01): : 239 - 244