FLASH LAMP ANNEALING OF ION-IMPLANTED SILICON

[1] BOMKE HA, 1978, APPL PHYS LETT, V33, P965

[2] THERMALLY ASSISTED FLASH ANNEALING OF SILICON AND GERMANIUM [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 751 - 753

[3] INCOHERENT-LIGHT-FLASH ANNEALING OF PHOSPHORUS-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 55 - 57

[4] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[5] GAT A, 1979, SOLID STATE TECHNOL, V22, P59

[6] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278

[7] GAT A, 1980, CW LASER ANNEALING I

[8] A DESCRIPTION OF THE LASER-INDUCED ANNEALING AND DIFFUSION BEHAVIOR OF IMPLANTED SILICON-CRYSTALS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 157 - 161

[9] HEINIG KH, 1980, SUM P INT SCH LATT D

[10] HEINIG KH, 1978, P INT C ION BEAM MOD, P707

[1] BOMKE HA, 1978, APPL PHYS LETT, V33, P965

[2] THERMALLY ASSISTED FLASH ANNEALING OF SILICON AND GERMANIUM [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 751 - 753

[3] INCOHERENT-LIGHT-FLASH ANNEALING OF PHOSPHORUS-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 55 - 57

[4] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[5] GAT A, 1979, SOLID STATE TECHNOL, V22, P59

[6] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278

[7] GAT A, 1980, CW LASER ANNEALING I

[8] A DESCRIPTION OF THE LASER-INDUCED ANNEALING AND DIFFUSION BEHAVIOR OF IMPLANTED SILICON-CRYSTALS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 157 - 161

[9] HEINIG KH, 1980, SUM P INT SCH LATT D

[10] HEINIG KH, 1978, P INT C ION BEAM MOD, P707