ACTIVATION-ENERGY ASSOCIATED WITH THE ANNEALING OF BURIED IMPLANTED OXIDES IN SILICON

被引：1

作者：

DAS, K ^{[1
]}

CENSLIVE, M ^{[1
]}

FRANKS, E ^{[1
]}

BUTCHER, JB ^{[1
]}

机构：

[1] MIDDLESEX POLYTECH,CTR MICROELECTR,LONDON N11 2NQ,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.333354

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3193 / 3194

页数：2

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