PRESSURE-DEPENDENCE OF THE DX CENTER IN GA1-XALXAS-TE

被引：21

作者：

SHAN, W

YU, PY

LI, MF

HANSEN, WL

BAUSER, E

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & CHEM SCI,BERKELEY,CA 94720

[2] MAX PLANCK INST,D-7000 STUTTGART 80,FED REP GER

[3] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

[4] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.40.7831

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7831 / 7838

页数：8

共 30 条

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[30] ASSESSMENT OF PERSISTENT-PHOTOCONDUCTIVITY CENTERS IN MBE GROWN ALXGA1-XAS USING CAPACITANCE SPECTROSCOPY MEASUREMENTS [J].

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