ORIGIN OF RESIDUAL PERSISTENT PHOTOCONDUCTIVITY IN SELECTIVELY DOPED GAAS/ALXGA1-XAS HETEROJUNCTIONS

被引：24

作者：

THEIS, TN

WRIGHT, SL

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 20期

关键词：

D O I：

10.1063/1.97028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1374 / 1376

页数：3

共 20 条

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[3]

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APPLIED PHYSICS LETTERS, 1984, 44 (03) :333-335

[6] PERSISTENT CHANNEL DEPLETION CAUSED BY HOT-ELECTRON TRAPPING EFFECT IN SELECTIVELY DOPED N-ALGAAS/GAAS STRUCTURES [J].

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[7] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

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[8]

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