NET AND TOTAL SHALLOW IMPURITY ANALYSIS OF SILICON BY LOW-TEMPERATURE FOURIER-TRANSFORM INFRARED-SPECTROSCOPY

被引：26

作者：

BABER, SC

机构：

来源：

THIN SOLID FILMS | 1980年 / 72卷 / 01期

关键词：

Compendex;

D O I：

10.1016/0040-6090(80)90575-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Semiconducting silicon

引用

页码：201 / 210

页数：10

共 17 条

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[6]

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[7] INFRARED SPECTRA OF GROUP-III ACCEPTORS IN SILICON [J].

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KAISER, RH .

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[8] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

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BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[9] LATTICE ABSORPTION BANDS IN SILICON [J].

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[10]

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