QUANTUM-WELL P-CHANNEL ALGAAS/INGAAS/GAAS HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS

被引：29

作者：

RUDEN, PP ^{[1
]}

SHUR, M ^{[1
]}

ARCH, DK ^{[1
]}

DANIELS, RR ^{[1
]}

GRIDER, DE ^{[1
]}

NOHAVA, TE ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

关键词：

D O I：

10.1109/16.43656

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2371 / 2379

页数：9

共 30 条

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