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HETEROGENEITIES AND SURFACE EFFECTS IN GLOW-DISCHARGE DEPOSITED HYDROGENATED AMORPHOUS-SILICON FILMS

被引：24
作者：
FRITZSCHE, H [1 ]
机构：
[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637
来源：
THIN SOLID FILMS | 1982年 / 90卷 / 02期
关键词：
D O I：
10.1016/0040-6090(82)90631-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：119 / 129
页数：11
相关论文
共 68 条
  • [1] DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON
    ADLER, D
    [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 3 - 14
  • [2] AKER B, UNPUB
  • [3] HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED AMORPHOUS-SILICON FILMS
    BEYER, W
    WAGNER, H
    [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 783 - 786
  • [4] TRANSPORT PROPERTIES OF DOPED AMORPHOUS SILICON
    BEYER, W
    OVERHOF, H
    [J]. SOLID STATE COMMUNICATIONS, 1979, 31 (01) : 1 - 4
  • [5] EFFECT OF BORON-DOPING ON THE HYDROGEN EVOLUTION FROM A-SI-H FILMS
    BEYER, W
    WAGNER, H
    MELL, H
    [J]. SOLID STATE COMMUNICATIONS, 1981, 39 (02) : 375 - 379
  • [6] TRANSPORT-PROPERTIES OF COMPENSATED A-SI FILMS
    BEYER, W
    MELL, H
    OVERHOF, H
    [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 103 - 106
  • [7] HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS
    BIEGELSEN, DK
    STREET, RA
    TSAI, CC
    KNIGHTS, JC
    [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 4839 - 4846
  • [8] THICKNESS-DEPENDENT CONDUCTIVITY AND PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON
    BRODSKY, MH
    EVANGELISTI, F
    FISCHER, R
    JOHNSON, RW
    REUTER, W
    SOLOMON, I
    [J]. SOLAR CELLS, 1980, 2 (04): : 401 - 406
  • [9] HYDROGEN-ASSOCIATED DISORDER MODES IN AMORPHOUS SI-H FILMS
    CARLOS, WE
    TAYLOR, PC
    [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (05) : 358 - 362
  • [10] EFFECT OF HYDROGEN CONTENT ON THE PHOTO-VOLTAIC PROPERTIES OF AMORPHOUS SILICON
    CARLSON, DE
    MAGEE, CW
    TRIANO, AR
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) : 688 - 691
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