ELECTRONIC SURFACE PROPERTIES OF UHV-CLEAVED 3-5 COMPOUNDS

被引：131

作者：

HUIJSER, A ^{[1
]}

VANLAAR, J ^{[1
]}

VANROOY, TL ^{[1
]}

机构：

[1] PHILIPS RES LABS, EINDHOVEN, NETHERLANDS

来源：

SURFACE SCIENCE | 1977年 / 62卷 / 02期

关键词：

D O I：

10.1016/0039-6028(77)90096-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：472 / 486

页数：15

相关论文

共 31 条

[1] BAER AD, 1971, SEL71025 STANF U REP
[2] INTRINSIC SURFACE STATES IN 3-5 COMPOUNDS
CALANDRA, C
SANTORO, G
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (02): : L51 - L54
[3] ELECTRONIC-STRUCTURE OF GAAS
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW LETTERS, 1974, 32 (12) : 674 - 677
[4] GASB SURFACES STATES AND SCHOTTKY-BARRIER PINNING
CHYE, PW
BABALOLA, IA
SUKEGAWA, T
SPICER, WE
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (23) : 1602 - 1604
[5] ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES
DINAN, JH
GALBRAIT.LK
FISCHER, TE
[J]. SURFACE SCIENCE, 1971, 26 (02) : 587 - &
[6] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS
EASTMAN, DE
FREEOUF, JL
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (26) : 1624 - 1627
[7] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110)
EASTMAN, DE
FREEOUF, JL
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (27) : 1601 - 1605
[8] EDEN RC, 1967, SEL67038 STANF U REP
[9] DETERMINATION OF SEMICONDUCTOR SURFACE PROPERTIES BY MEANS OF PHOTOELECTRIC EMISSION
FISCHER, TE
[J]. SURFACE SCIENCE, 1969, 13 (01) : 30 - &
[10] PHOTOELECTRIC EMISSION AND WORK FUNCTION OF INP
FISCHER, TE
[J]. PHYSICAL REVIEW, 1966, 142 (02): : 519 - &

← 1 2 3 4 →