ELECTRONIC AND OPTICAL-DEVICES WITH GALLIUM-ARSENIDE ON SILICON PREPARED BY MBE

被引：3

作者：

MORKOC, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90356-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：79 / 86

页数：8

共 37 条

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MORKOC, H ;

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[2] EPITAXIAL CDTE-FILMS ON GAAS/SI AND GAAS SUBSTRATES [J].

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[3]

Chen H. Z., 1987, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5), P238, DOI 10.1109/IEDM.1987.191398

[4] CONTINUOUS-WAVE OPERATION OF EXTREMELY LOW-THRESHOLD GAAS/ALGAAS BROAD-AREA INJECTION-LASERS ON (100) SI SUBSTRATES AT ROOM-TEMPERATURE [J].

CHEN, HZ ;

GHAFFARI, A ;

WANG, H ;

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YARIV, A .

OPTICS LETTERS, 1987, 12 (10) :812-813

[5] HIGH-FREQUENCY MODULATION OF ALGAAS/GAAS LASERS GROWN ON SI SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

CHEN, HZ ;

PASLASKI, J ;

YARIV, A ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1988, 52 (08) :605-606

[6] MONOLITHIC INTEGRATION OF GAAS/ALGAAS DOUBLE-HETEROSTRUCTURE LEDS AND SI MOSFETS [J].

CHOI, HK ;

TURNER, GW ;

WINDHORN, TH ;

TSAUR, BY .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :500-502

[7] MONOLITHIC INTEGRATION OF GAAS/ALGAAS LED AND SI DRIVER CIRCUIT [J].

CHOI, HK ;

MATTIA, JP ;

TURNER, GW ;

TSAUR, BY .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) :512-514

[8]

CHOI HK, 1984, IEEE ELECTRON DEVICE, V5, P205

[9] LOW-THRESHOLD OPERATION OF ALGAAS/GAAS MULTIPLE QUANTUM-WELL LASERS GROWN ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

CHONG, TC ;

FONSTAD, CG .

APPLIED PHYSICS LETTERS, 1987, 51 (04) :221-223

[10]

DHAENENS I, COMMUNICATION

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