100 W 671 NM VISIBLE LASER DIODE-ARRAY

被引：4

作者：

SERREZE, HB

HARDING, CM

机构：

[1] McDonnell Douglas Electronic Systems Co., Opto-Electronics Center, Elmsford, NY 10523

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 23期

关键词：

LASERS AND LASER APPLICATIONS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19921357

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaInP/AlGaInP, strained-layer, single quantum well, monolithic laser diode array is described which has achieved a room temperature quasi-CW (100 mus, 10 Hz) output of over 100 W at 671 nm.

引用

页码：2115 / 2116

页数：2

共 8 条

[1] HIGH-POWER, 60W QUASI-CW, VISIBLE LASER DIODE-ARRAYS [J].

HADEN, JM ;

NAM, DW ;

WELCH, DF ;

ENDRIZ, JG ;

SCIFRES, DR .

ELECTRONICS LETTERS, 1992, 28 (05) :451-452

[2] ALEXANDRITE LASER PUMPED BY SEMICONDUCTOR-LASERS [J].

SCHEPS, R ;

GATELY, BM ;

MYERS, JF ;

KRASINSKI, JS ;

HELLER, DF .

APPLIED PHYSICS LETTERS, 1990, 56 (23) :2288-2290

[3] DIODE-PUMPED CR-LISRALF6 LASER [J].

SCHEPS, R ;

MYERS, JF ;

SERREZE, HB ;

ROSENBERG, A ;

MORRIS, RC ;

LONG, M .

OPTICS LETTERS, 1991, 16 (11) :820-822

[4] CR-LICAALF6 LASER PUMPED BY VISIBLE LASER-DIODES [J].

SCHEPS, R .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (08) :1968-1970

[5] LOW-THRESHOLD, STRAINED-LAYER, GAINP ALGAINP GRINSCH VISIBLE DIODE-LASERS [J].

SERREZE, HB ;

CHEN, YC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (05) :397-399

[6] HIGH-POWER, VERY LOW THRESHOLD, GAINP/ALGAINP VISIBLE DIODE-LASERS [J].

SERREZE, HB ;

CHEN, YC ;

WATERS, RG .

APPLIED PHYSICS LETTERS, 1991, 58 (22) :2464-2466

[7] 1W CW, 672NM VISIBLE LASER-DIODES [J].

SERREZE, HB ;

HARDING, CM ;

WATERS, RG .

ELECTRONICS LETTERS, 1991, 27 (24) :2245-2246

[8] HIGH-POWER, 8.5W CW, VISIBLE LASER-DIODES [J].

WELCH, DF ;

SCIFRES, DR .

ELECTRONICS LETTERS, 1991, 27 (21) :1915-1916

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