RADIATION-INDUCED DEFECTS IN CVD-GROWN 3C-SIC

被引：90

作者：

ITOH, H ^{[1
]}

YOSHIKAWA, M ^{[1
]}

NASHIYAMA, I ^{[1
]}

MISAWA, S ^{[1
]}

OKUMURA, H ^{[1
]}

YOSHIDA, S ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 06期

关键词：

D O I：

10.1109/23.101184

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Radiation induced defects in 3C-SiC epitaxially grown by chemical vapor deposition method were studied with electron spin resonance (ESR) technique. A fifteen-line ESR spectrum was observed in 2MeV proton and 1MeV electron irradiated 3C-SiC when the magnetic field was applied parallel to the <100> axis. This spectrum labeled T1, which has an isotropic g-value of 2.0029±0.0001, is interpreted by simultaneous hyperfine interactions of a paramagnetic electron with surrounding 13C at four carbon sites and 29Si at twelve silicon sites. It indicates that the T1 spectrum arises from a point defect at a silicon site. The observed hyperfine interactions with neighboring 13C and 29Si nuclei are discussed in terms of a simple molecular-orbital treatment of the defect. © 1990 IEEE

引用

页码：1732 / 1738

页数：7

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