STRUCTURAL RELAXATION IN ION-DAMAGED AMORPHOUS-GERMANIUM

被引:12
作者
BOULDIN, CE [1 ]
FORMAN, RA [1 ]
BELL, MI [1 ]
DONOVAN, EP [1 ]
机构
[1] USN,RES LAB,DIV CONDENSED MATTER & RADIAT SCI,WASHINGTON,DC 20375
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 11期
关键词
D O I
10.1103/PhysRevB.44.5492
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
X-ray and optical studies of ion-damaged amorphous germanium reveal a structural relaxation produced by low-temperature (200-degrees-C) annealing. This relaxation appears to be qualitatively different from that observed previously at higher annealing temperatures (250-500-degrees-C). Extended x-ray-absorption fine-structure measurements, made in the total-electron-yield mode with a sampling depth of 600-800 angstrom, indicate a sharpening of the first shell in the radial distribution, but no change in the first-shell distance or coordination number. No higher shells in the radial distribution are observed, before or after annealing, indicating that these shells remain highly disordered. Infrared-reflection and Raman-scattering measurements confirm that a relaxation takes place and that there is no nucleation of microcrystals in the implanted layer within the detection limit of 1.5% volume fraction. In contrast to previous studies, the present results exhibit no evidence of a reduction in bond-angle disorder.
引用
收藏
页码:5492 / 5496
页数:5
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