共 20 条
[1]
STRUCTURAL INFORMATION FROM THE RAMAN-SPECTRUM OF AMORPHOUS-SILICON
[J].
PHYSICAL REVIEW B,
1985, 32 (02)
:874-878
[2]
CONVERSION-ELECTRON EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE MEASUREMENTS OF ION-DAMAGED GAAS
[J].
PHYSICAL REVIEW B,
1987, 35 (03)
:1429-1432
[3]
DONAVAN EP, 1989, APPL PHYS LETT, V55, P1516
[6]
STRUCTURAL RELAXATION AND ORDER IN ION-IMPLANTED SI AND GE
[J].
PHYSICAL REVIEW B,
1988, 37 (17)
:10154-10158
[7]
EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE - DIRECT COMPARISON OF ABSORPTION AND ELECTRON YIELD
[J].
PHYSICAL REVIEW B,
1985, 31 (10)
:6233-6237
[8]
ELECTRON-YIELD EXTENDED X-RAY ABSORPTION FINE-STRUCTURE WITH THE USE OF A GAS-FLOW ELECTRON DETECTOR
[J].
PHYSICAL REVIEW B,
1984, 29 (01)
:491-492
[9]
LANNIN JS, 1985, SOLID STATE COMMUN, V253, P939
[10]
LYTLE FW, UNPUB