STABILIZED SUPERCRITICAL TRANSFERRED ELECTRON AMPLIFIERS

被引：10

作者：

WALSH, TE

PERLMAN, BS

ENSTROM, RE

机构：

[1] Microwave Solid-State Technology Center, Harrison, N.J., RCA Microwave Operations

[2] RCA Microwave Applied Research Laboratory, David Sarnoff Research Center, Princeton. N.J.

[3] RCA Materials Research Laboratory, David Sarnoff Research Center, Princeton, N.J.

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1969年 / SC 4卷 / 06期

关键词：

D O I：

10.1109/JSSC.1969.1050039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs transferred electron devices having nl products as large as 4 X 1012 cm-2 have been stabilized by circuit loading to obtain linear reflection-type amplification. Peak output power in excess of 1 watt has been obtained at C band. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：374 / +

页数：1

共 9 条

[1]

ENSTROM RE, 1967, T METALL SOC AIME, V239, P413

[2] SATURATION POWER IN GAAS AMPLIFIERS [J].