TRANSMISSION ELECTRON-MICROSCOPE CHARACTERIZATION OF ALGAINP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引:22
作者
CHEN, GS
WANG, TY
STRINGFELLOW, GB
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D O I
10.1063/1.102499
中图分类号
O59 [应用物理学];
学科分类号
摘要
AlGaInP epitaxial layers grown at 690°C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the {111} directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, finally, forms the columnar structure.
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页码:1463 / 1465
页数:3
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共 23 条
  • [1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS
    ASAHI, H
    KAWAMURA, Y
    NAGAI, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4928 - 4931
  • [2] ASHAI H, 1989, APPL PHYS LETT, V65, P5007
  • [3] BARNARD JE, 1988, PHYS REV B, V38, P6338
  • [4] SUBSTRATE-DRIVEN ORDERING MICROSTRUCTURE IN GAXIN1-XP ALLOYS
    BELLON, P
    CHEVALIER, JP
    AUGARDE, E
    ANDRE, JP
    MARTIN, GP
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) : 2388 - 2394
  • [5] CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    BELLON, P
    CHEVALIER, JP
    MARTIN, GP
    DUPONTNIVET, E
    THIEBAUT, C
    ANDRE, JP
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 567 - 569
  • [6] STRUCTURE AND PROPERTIES OF SPINODALLY DECOMPOSED CU-NI-FE ALLOYS
    BUTLER, EP
    THOMAS, G
    [J]. ACTA METALLURGICA, 1970, 18 (03): : 347 - &
  • [7] ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF (ALXGA1-X)0.51IN0.49P (X FROM 0 TO 1) USING TRIMETHYLALKYLS
    CAO, DS
    KIMBALL, AW
    STRINGFELLOW, GB
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) : 739 - 744
  • [8] GAAS1-XSBX GROWTH BY OMVPE
    CHERNG, MJ
    COHEN, RM
    STRINGFELLOW, GB
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (05) : 799 - 813
  • [9] SURFACE-LAYER SPINODAL DECOMPOSITION IN IN1-XGAXASYP1-Y AND IN1-XGAXAS GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY
    CHU, SNG
    NAKAHARA, S
    STREGE, KE
    JOHNSTON, WD
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4610 - 4615
  • [10] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
    GOMYO, A
    KOBAYASHI, K
    KAWATA, S
    HINO, I
    SUZUKI, T
    YUASA, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373