STUDY OF SI/SIO2 INTERFACE BY TRANSVERSE ACOUSTOELECTRIC VOLTAGE MEASUREMENTS

被引：3

作者：

ABBATE, A

PALMA, F

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 13期

关键词：

D O I：

10.1063/1.102472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1306 / 1308

页数：3

共 9 条

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[4] A NEW THEORETICAL-MODEL FOR TRANSVERSE ACOUSTOELECTRIC VOLTAGE MEASUREMENTS ON SI/SIO2 STRUCTURES [J].

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[9] THE ORIGIN AND NATURE OF SILICON BAND-GAP STATES AT THE SI-SIO2 INTERFACE [J].

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