CARRIER DYNAMICS AND EMISSION-LINE NARROWING IN N-TYPE AND P-TYPE MOLECULAR-BEAM GROWN ZNSE EPILAYERS

被引：9

作者：

BOLGER, JA ^{[1
]}

KAR, AK ^{[1
]}

WHERRETT, BS ^{[1
]}

PRIOR, KA ^{[1
]}

SIMPSON, J ^{[1
]}

WANG, SY ^{[1
]}

CAVENETT, BC ^{[1
]}

机构：

[1] HERIOT WATT UNIV,DEPT PHYS,EDINBURGH EH14 4AS,MIDLOTHIAN,SCOTLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.109980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier recombination processes in thin-film epitaxial ZnSe are investigated using a transient-grating technique. For photoexcitation levels in the 10(17)-10(18) cm-3 range the dominant recombination mechanism is found to be radiative, described by a rate coefficient of 8 x 10(-9) cm3 s-1. For densities exceeding approximately 2 x 10(18) cm-3 ultrafast grating recovery is observed, accompanied by line narrowing of the near-band-edge blue photoluminescence; this is interpreted as being due to stimulated radiative recombination.

引用

页码：571 / 573

页数：3

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