IMPROVED SURFACE-PROPERTIES OF INP THROUGH CHEMICAL TREATMENTS

被引：21

作者：

PAUL, TK

BOSE, DN

机构：

[1] Semiconductor Division, Materials Science Center, Indian Institute of Technology

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 12期

关键词：

D O I：

10.1063/1.349734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chemical treatment is a very effective method for passivation of semiconductor surfaces. HF and sulfide (Na2S.9H2O) pretreatments of InP have been shown to improve the properties of BaF2/InP interface significantly. The interface state density as obtained from C-V (1 MHz) measurements of metal-insulator-semiconductor structures was found to be reduced from 5.8 x 10(10) cm-2 eV-1 to 2.1 x 10(10) cm-2 eV-1 after HF treatment. The reduced interface state density resulted in increased photoluminescence intensity. X-ray photoelectron spectroscopy studies revealed that the formation of InF3 and P2S3 after HF and sulfide treatments, respectively, are responsible for better interfacial behavior.

引用

页码：7387 / 7391

页数：5

共 20 条

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].