SPACE-CHARGE RECOMBINATION IN N-ALGAAS/P+-GAAS HETEROJUNCTION DIODES

被引:8
作者
LOW, TS
MARS, DE
机构
关键词
D O I
10.1063/1.102272
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2423 / 2425
页数:3
相关论文
共 21 条
[1]   PHOTOLUMINESCENCE KILLER CENTER IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
AKIMOTO, K ;
KAMADA, M ;
TAIRA, K ;
ARAI, M ;
WATANABE, N .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2833-2836
[2]   STRUCTURAL-CHANGES OF THE INTERFACE, ENHANCED INTERFACE INCORPORATION OF ACCEPTORS, AND LUMINESCENCE EFFICIENCY DEGRADATION IN GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY UPON GROWTH INTERRUPTION [J].
BIMBERG, D ;
MARS, D ;
MILLER, JN ;
BAUER, R ;
OERTEL, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1014-1021
[3]  
CAMNITZ LH, 1988, COMMUNICATION
[4]   MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE USING DIRECT RADIATIVE SUBSTRATE HEATING [J].
HELLMAN, ES ;
PITNER, PM ;
HARWIT, A ;
LIU, D ;
YOFFE, GW ;
HARRIS, JS ;
CAFFEE, B ;
HIERL, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :574-577
[5]   HIGH-SPEED FREQUENCY-DIVIDERS USING SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
ISHIBASHI, T ;
YAMAUCHI, Y ;
NAKAJIMA, O ;
NAGATA, K ;
ITO, H .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :194-196
[6]   CHARACTERIZATION OF AL0.25GA0.75AS GROWN BY MOLECULAR-BEAM EPITAXY [J].
LIN, MJ ;
LARKINS, EC ;
PAO, YC ;
LIU, D ;
YOFFE, G ;
MA, TK ;
HARRIS, JS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :631-635
[7]   AN INDIUM-FREE MOUNT FOR GAAS SUBSTRATE HEATING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH [J].
MARS, DE ;
MILLER, JN .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :571-573
[8]   CONTROL OF BE DIFFUSION IN MOLECULAR-BEAM EPITAXY GAAS [J].
MILLER, JN ;
COLLINS, DM ;
MOLL, NJ .
APPLIED PHYSICS LETTERS, 1985, 46 (10) :960-962
[9]   EFFECT OF ARSENIC SOURCE ON ELECTRON TRAP CONCENTRATIONS IN MBE-GROWN AL0.2GA0.8AS [J].
NARITSUKA, S ;
YAMANAKA, K ;
MANNOH, M ;
MIHARA, M ;
ISHII, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (10) :1324-1326
[10]   SURFACE EFFECT-INDUCED FAST BE DIFFUSION IN HEAVILY DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
PAO, YC ;
HIERL, T ;
COOPER, T .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :201-204