PULSED ELECTRON-BEAM INDUCED RECRYSTALLIZATION AND DAMAGE IN GAAS

被引：6

作者：

TANDON, JL

GOLECKI, I

NICOLET, MA

SADANA, DK

WASHBURN, J

机构：

[1] CALTECH,PASADENA,CA 91125

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 11期

关键词：

D O I：

10.1063/1.90987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-pulse electron-beam irradiations of 300-keV 1015Kr +/cm2 or 300-keV 3×1012 Se +/cm2 implanted layers in unencapsulated 〈100〉 GaAs are studied as a function of the electron beam fluence. The electron beam pulse had a mean electron energy of ≃20 keV and a time duration of 10 -7 s. Analyses by means of MeV He+ channeling and TEM show the existence of narrow fluence window (0.4-0.7 J/cm2) within which amorphous layers can be sucessfully recrystallized, presumably in the liquid phase regime. Too high a fluence produces extensive deep damage and loss of As.

引用

页码：867 / 870

页数：4

共 13 条

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[10]

TANDON JL, 1979, AIP C P, V50, P616

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