PULSED-LASER ANNEALING OF IMPLANTED LAYERS IN GAAS

被引：10

作者：

TANDON, JL

NICOLET, MA

TSENG, WF

EISEN, FH

CAMPISANO, SU

FOTI, G

RIMINI, E

机构：

[1] CALTECH,PASADENA,CA 91125

[2] UNIV CANTANIA,INST STRUTTURA DELLA MAT DELL,I-95129 CANTANIA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 09期

关键词：

D O I：

10.1063/1.90887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semi-insulating Si-implanted GaAs has been irradiated by a ruby-laser pulse (λ=0.694 μm, tp=15 ns) without using an encapsulant. Hall-effect measurements indicate that the values of sheet resistance, effective sheet electron concentration, and effective electron mobilities are roughly comparable to those of conventionally annealed samples. TEM micrographs show a difference in the defect structure after these two types of annealing.

引用

页码：597 / 599

页数：3

共 13 条

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