A NEW EXPERIMENTAL APPROACH FOR STUDYING THE GAIN BROADENING MECHANISM IN SEMICONDUCTOR-LASERS

被引：2

作者：

KAWAGUCHI, H

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来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 03期

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D O I：

10.1063/1.329739

中图分类号：

O59 [应用物理学];

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页码：1209 / 1211

页数：3

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