HIGHLY RELIABLE CONTACTS FOR LEAD-SALT DIODE-LASERS

被引：13

作者：

LO, W

机构：

[1] Physics Department, General Motors Research Laboratories, Warren, MI 48090, United States

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.328773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：900 / 902

页数：3

共 11 条

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[3]

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[5] CONTACT RELIABILITY STUDIES ON LEAD-SALT DIODE-LASERS [J].

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[6]

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[8]

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[9] INTERDIFFUSION IN THIN CONDUCTOR FILMS - CHROMIUM/GOLD, NICKEL/GOLD AND CHROMIUM SILICIDE/GOLD [J].

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[10] KINETICS OF EPITAXIAL-GROWTH OF GAN USING GA, HCL AND NH3 [J].

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