ELECTRICAL-PROPERTIES OF SHALLOW P+-N JUNCTIONS FORMED BY BF2 ION-IMPLANTATION IN GERMANIUM PREAMORPHIZED SILICON

被引：26

作者：

OZTURK, MC

WORTMAN, JJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 04期

关键词：

D O I：

10.1063/1.99494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：281 / 283

页数：3

共 7 条

[1] CHANNELING EFFECT FOR LOW-ENERGY ION-IMPLANTATION IN SI [J].

CHO, K ;

ALLEN, WR ;

FINSTAD, TG ;

CHU, WK ;

LIU, J ;

WORTMAN, JJ .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :265-272

[2] STRUCTURAL AND ELECTRICAL-PROPERTIES OF BF-2+ IMPLANTED, RAPID ANNEALED SILICON [J].

LUNNON, ME ;

CHEN, JT ;

BAKER, JE .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1056-1058

[3] RAPID THERMAL AND PULSED LASER ANNEALING OF BORON FLUORIDE-IMPLANTED SILICON [J].

NARAYAN, J ;

HOLLAND, OW ;

CHRISTIE, WH ;

WORTMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2709-2716

[4] ELECTRICAL-PROPERTIES OF IMPLANTED AND RAPID THERMAL ANNEALED SHALLOW P+-N JUNCTIONS [J].

OZGUZ, VH ;

WORTMAN, JJ ;

HAUSER, JR ;

SIMPSON, L ;

LITTLEJOHN, MA ;

CHU, WK ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1225-1226

[5]

OZTURK MC, UNPUB

[6] ELECTRICAL CHARACTERISTICS AND CONTACT RESISTANCE OF B+-IMPLANTED AND BF2+-IMPLANTED SILICON DIODES WITH FURNACE AND RAPID THERMAL ANNEALING [J].

SIMARDNORMANDIN, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) :1354-1357

[7] BORON, FLUORINE, AND CARRIER PROFILES FOR B AND BF2 IMPLANTS INTO CRYSTALLINE AND AMORPHOUS SI [J].

WILSON, RG .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6879-6889

← 1 →