PREPARATION AND CHARACTERIZATION OF ZNS THIN-FILMS PRODUCED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：25

作者：

SMITH, PB

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576075

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1451 / 1455

页数：5

共 20 条

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[4] EVALUATION OF INTERFACE DEFECTS AND THE EFFECT OF IODINE IMPURITY IN LOW-RESISTIVITY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION-GROWN ZNS FILMS ON GAAS
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[5] Kawakami Y., 1986, Technology Reports of the Osaka University, V36, P335
[6] THE CHARACTERIZATION OF SEMICONDUCTOR-MATERIALS BY BACKSCATTERING SPECTROSCOPY
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 10-1 (MAY) : 583 - 587
[7] HYDROGEN-RELATED DEFECTS IN VAPOUR-DEPOSITED ZINC-SULFIDE
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[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) : 125 - 136
[8] LOGAR RE, 1977, 6TH P INT C CHEM VAP, P195
[9] ELLIPSOMETRIC STUDIES ON ZINC-SULFIDE THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) : 1385 - 1393
[10] SAUNDERS A, 1987, 7TH P INT C TERN MUL, P213

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