NEW INSTABILITY CONCEPT IN AVALANCHE-DIODE OSCILLATION

被引：12

作者：

DAIKOKU, K ^{[1
]}

MIZUSHIMA, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO 180, TOKYO, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 06期

关键词：

D O I：

10.1143/JJAP.13.989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：989 / 994

页数：6

共 15 条

[1] PULSE-DRIVEN SILICON P-N JUNCTION AVALANCHE OSCILLATORS FOR 0.9 TO 20 MM BAND [J].

BOWMAN, LS ;

BURRUS, CA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (08) :411-+

[2]

CLORFEINE AS, 1969, RCA REV, V30, P397

[3]

DAIKOKU K, 1973, 305 JOINT CONV REC F

[4] A LARGE-SIGNAL ANALYSIS OF IMPATT DIODES [J].

EVANS, WJ ;

HADDAD, GI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) :708-+

[5] ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J].

GILDEN, M ;

HINES, ME .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :169-&

[6] VOLTERRA AND OTHER NONLINEAR MODELS OF INTERACTING POPULATIONS [J].

GOEL, NS ;

MAITRA, SC ;

MONTROLL, EW .

REVIEWS OF MODERN PHYSICS, 1971, 43 (02) :231-+

[7]

HREILING PT, 1970, IEEE T MICROW THEORY, VMT18, P842

[8] NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I. [J].

MISAWA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :137-+

[9] NEGATIVE RESISTANCE AND FILAMENTARY CURRENTS IN AVALANCHING SILICON P+-I-N+ JUNCTIONS [J].

MULLER, MW ;

GUCKEL, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (08) :560-+

[10] TRAPATT OSCILLATIONS IN A P-I-N AVALANCHE DIODE [J].

PARKER, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (05) :281-+

← 1 2 →