ATOMIC-BEAM MODIFICATIONS OF INSULATOR SURFACES

A deposition chamber is described comprising a unique broad-beam, high-flux (>2 mA/cm2), low-energy (<100 eV) molecular and atomic nitrogen source suitable for growth and/or surface modification of ceramic thin films. Atom flux is generated by collisionally neutralizing and dissociating a diatomic nitrogen ion beam impinging a specially shaped surface interposed between the ion source and the substrate to be modified. The dissociation surface functions as a ''funnel'' to give the resulting neutral beam a tight geometric focus. In addition, our chamber possesses the unique capability of surface analysis at high pressures (mTorr) during thin-film formation through the use of pulsed time-of-flight ion scattering techniques. This allows continuous monitoring (and control) of film stoichiometry during growth.