REACTIVE ION-BEAM ETCHING OF INP WITH CL2

被引：17

作者：

MUTOH, K ^{[1
]}

NAKAJIMA, M ^{[1
]}

MIHARA, M ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,SEMICOND RES CTR,OPTOELECTR RES LAB,TAMA KU,KAWASAKI 214,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 06期

关键词：

Electron cyclotron resonance plasma; Indium phosphide (lnP); Reactive ion-beam etching;

D O I：

10.1143/JJAP.29.1022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reactive ion-beam etching (RIBE) of InP with Cl2 at room temperature has been studied by varying the ion extraction voltage and the gas pressure. The sputtering yield is found to increase linearly with the ion extraction voltage above a threshold voltage. RIBE with a higher Cl2 gas pressure is dominated by the chemically reactive etching, and offers a higher etch rate and a smoother surface. Smooth surfaces with low concentrations of residual Cl atoms are obtained under the ion extraction voltage of 400 V and Cl2 gas pressure of 2.5×10-3 Torr. © 1990 The Japan Society of Applied Physics.

引用

页码：1022 / 1026

页数：5

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