A MORPHOLOGICAL AND STRUCTURAL STUDY OF SIC LAYERS OBTAINED BY LPCVD USING TETRAMETHYLSILANE

被引：50

作者：

FIGUERAS, A ^{[1
]}

GARELIK, S ^{[1
]}

RODRIGUEZCLEMENTE, R ^{[1
]}

ARMAS, B ^{[1
]}

COMBESCURE, C ^{[1
]}

DUPUY, C ^{[1
]}

机构：

[1] INST SCI & GENIE MAT & PROCEDEES,F-66120 FONT ROMEU,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 110卷 / 03期

关键词：

D O I：

10.1016/0022-0248(91)90290-L

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Beta-SiC polycrystalline layers were grown by LPCVD in a cold wall reactor using TMS (tetramethylsilane) diluted in hydrogen as precursor. TMS has the advantage of supplying Si and C from an individual molecule free from halogen. The dependence of the kinetics of deposition on substrate temperature, total pressure and TMS partial pressure was obtained. Structural and morphological analysis were performed using SEM and X-Ray diffraction.

引用

页码：528 / 542

页数：15

共 17 条

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