DETERMINATION OF OXYGEN CONCENTRATION IN HEAVILY DOPED SILICON

被引：6

作者：

GOLDSTEIN, M ^{[1
]}

CHU, PK ^{[1
]}

BLEILER, RJ ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 01期

关键词：

D O I：

10.1116/1.586689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A number of years ago secondary ion mass spectrometry was proposed as a viable technique to determine the oxygen content in low resistivity (< 0.1 OMEGA cm) silicon substrates. Since then, significant advances have been made in analytical protocols and instrumentation specifically for the measurement of oxygen in silicon. This article focuses on recent improvements in measurement precision and sample throughput. Presently, precisions of < +/- 2% can be obtained on a routine basis, and can be as good as +/- 1.4% in the most favorable circumstances. Sample throughput has been improved to 24 per 8 h per instrument during normal operations.

引用

页码：92 / 98

页数：7

共 12 条

[1] DETERMINATION OF PARTS PER BILLION OF OXYGEN IN SILICON [J].