THE INFLUENCE OF INTERFACIAL ROUGHNESS ON PARALLEL TRANSPORT AT OXIDE SEMICONDUCTOR AND HETEROJUNCTION INTERFACES

被引：3

作者：

GOODNICK, SM ^{[1
]}

LARY, JE ^{[1
]}

OWEN, R ^{[1
]}

SRI, O ^{[1
]}

WILMSEN, CW ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1035 / 1040

页数：6

共 13 条

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