TWO-DIMENSIONAL ELECTRON-TRANSPORT IN INP SURFACE-LAYERS

被引：1

作者：

BAILEY, GR

OWENS, RE

WILMSEN, CW

GOODNICK, SM

机构：

[1] COLORADO STATE UNIV,FT COLLINS,CO 80523

[2] OREGON STATE UNIV,CORVALLIS,OR 97331

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583828

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：976 / 979

页数：4

共 17 条

[1]

CHU H, 1985, SOLID STATE ELECTRON, V28, P733

[2] ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER - POSSIBLE CONTRIBUTION FROM BULK PHONONS [J].

EZAWA, H ;

KAWAJI, S ;

KURODA, T ;

NAKAMURA, K .

SURFACE SCIENCE, 1971, 24 (02) :659-&

[3] SCATTERING BY POLAR-OPTICAL PHONONS IN A QUASI-2-DIMENSIONAL SEMICONDUCTOR [J].

FERRY, DK .

SURFACE SCIENCE, 1978, 75 (01) :86-91

[4] HOT-ELECTRON EFFECTS IN SILICON QUANTIZED INVERSION LAYERS [J].

FERRY, DK .

PHYSICAL REVIEW B, 1976, 14 (12) :5364-5371

[5]

FERRY DK, 1981, VLSI ELECTRONICS MIC, V1

[6] NEW MODEL FOR SLOW CURRENT DRIFT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

GOODNICK, SM ;

HWANG, T ;

WILMSEN, CW .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :453-455

[7] ELECTRON-TRANSPORT IN INVERSION AND ACCUMULATION LAYERS OF III-V-COMPOUNDS [J].

GOODNICK, SM ;

FERRY, DK .

THIN SOLID FILMS, 1983, 103 (1-2) :27-46

[8] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES [J].

HESS, K .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :484-486

[9] ENHANCEMENT TYPE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH PLASMA ANODIC ALUMINUM-OXIDE AS THE GATE INSULATOR [J].

HIRAYAMA, Y ;

PARK, HM ;

KOSHIGA, F ;

SUGANO, T .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :712-713

[10] IMPROVEMENT OF INP MISFET CHARACTERISTICS USING INFRARED LAMP ANNEALING [J].

HIROTA, Y ;

OKAMURA, M ;

HISAKI, T ;

MIKAMI, O .

ELECTRONICS LETTERS, 1985, 21 (16) :686-688

← 1 2 →