A TECHNOLOGY FOR THE MONOLITHIC FABRICATION OF A PRESSURE SENSOR AND RELATED CIRCUITRY

被引：8

作者：

CANE, C ^{[1
]}

CAMPABADAL, F ^{[1
]}

ESTEVE, J ^{[1
]}

LOZANO, M ^{[1
]}

GOTZ, A ^{[1
]}

SANTANDER, J ^{[1
]}

BURRER, C ^{[1
]}

PLAZA, JA ^{[1
]}

PAHUN, L ^{[1
]}

MARCO, S ^{[1
]}

机构：

[1] UNIV BARCELONA,DEPT FIS APLICADA & ELECTR,E-08028 BARCELONA,SPAIN

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1995年 / 46卷 / 1-3期

关键词：

PRESSURE SENSORS; CMOS;

D O I：

10.1016/0924-4247(94)00876-J

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple technology for the monolithic fabrication of piezoresistive pressure sensors and signal-conditioning circuitry is presented. The proposed methodology is based on the partition of the complete process into three main blocks: pre-processing steps, related to the sensor structure, standard CMOS technology and post-processing, corresponding to wafer backside etching. The feasibility of the presented technology is demonstrated by the results obtained from the characterization of the sensor devices, circuits and sensor-circuit combination that have been designed, fabricated and tested. In addition, the results obtained from a complete set of technological test structures show no significant effect of the additional processing on the characteristics of the standard CMOS technology.

引用

页码：133 / 136

页数：4

共 7 条

[1] MICROMACHINED BEAM-DIAPHRAGM STRUCTURE IMPROVES PERFORMANCES OF PRESSURE TRANSDUCER [J].

BAO, MH ;

YU, LZ ;

WANG, Y .

SENSORS AND ACTUATORS A-PHYSICAL, 1990, 21 (1-3) :137-141

[2] STUDY OF ELECTROCHEMICAL ETCH-STOP FOR HIGH-PRECISION THICKNESS CONTROL OF SILICON MEMBRANES [J].

KLOECK, B ;

COLLINS, SD ;

DEROOIJ, NF ;

SMITH, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) :663-669

[3]

KRESS HJ, 1991, SENSOR ACTUAT A-PHYS, V25, P21

[4] ANALYSIS OF NONLINEARITY IN HIGH-SENSITIVITY PIEZORESISTIVE PRESSURE SENSORS [J].

MARCO, S ;

SAMITIER, J ;

RUIZ, O ;

MORANTE, JR ;

ESTEVE, J .

SENSORS AND ACTUATORS A-PHYSICAL, 1993, 37-8 :790-795

[5]

MARCO S, 1993, OCT P SENSOR 93 NUR, P213

[6]

SANCER CS, 1980, IEEE T ELECTRON DEV, V27, P927

[7] A NOVEL STRUCTURE OF PRESSURE SENSORS [J].

WANG, YL ;

ZHENG, XY ;

LIU, LT ;

LI, ZJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (08) :1797-1802

← 1 →