IMPURITY INCORPORATION DURING RF SPUTTERING OF SILICON OXIDE LAYERS

被引：14

作者：

PETERSSON, S ^{[1
]}

LINKER, G ^{[1
]}

MEYER, O ^{[1
]}

机构：

[1] KERN FORSCH ZENTRUM, INST ANGEW KERN PHYS, KARLSRUHE, WEST GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1972年 / 14卷 / 02期

关键词：

D O I：

10.1002/pssa.2210140229

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：605 / 611

页数：7

共 9 条

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DAVIDSON, SM .

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ZUEGEL, M .

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[4] INFLUENCE OF DEPOSITION TEMPERATURE ON PROPERTIES OF HYDROLYTICALLY GROWN ALUMINUM OXIDE FILMS [J].

KAMOSHIDA, M ;

MITCHELL, IV ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1971, 18 (07) :292-+

[5] ARGON CONCENTRATION IN TUNGSTEN FILMS DEPOSITED BY DC-SPUTTERING [J].

LEE, WW ;

OBLAS, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1970, 7 (01) :129-&

[6]

LINKER G, UNPUBLISHED RESULTS

[7] ANALYSIS OF AMORPHOUS LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS [J].

MEYER, O ;

GYULAI, J ;

MAYER, JW .

SURFACE SCIENCE, 1970, 22 (02) :263-&

[8] ANALYSIS OF SILICON NITRIDE LAYERS DEPOSITED FROM SIH4 AND N2 ON SILICON [J].

MEYER, O ;

SCHERBER, W .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) :1909-&

[9] GAS INCORPORATION INTO SPUTTERED FILMS [J].

WINTERS, HF ;

KAY, E .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (10) :3928-&

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