NONIDEAL BASE CURRENT IN BIPOLAR-TRANSISTORS AT LOW-TEMPERATURES

被引：69

作者：

WOO, JCS ^{[1
]}

PLUMMER, JD ^{[1
]}

STORK, JMC ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 01期

关键词：

D O I：

10.1109/T-ED.1987.22895

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：130 / 138

页数：9

共 17 条

[1] THE EFFECT OF BASE DOPING ON THE PERFORMANCE OF SI BIPOLAR-TRANSISTORS AT LOW-TEMPERATURES [J].

DUMKE, WP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) :494-500

[2] BEHAVIOR OF ELECTRICALLY SMALL DEPLETION MODE MOSFETS AT LOW-TEMPERATURE [J].

GAENSSLEN, FH ;

JAEGER, RC .

SOLID-STATE ELECTRONICS, 1981, 24 (03) :215-220

[3] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J].

GAENSSLEN, FH ;

RIDEOUT, VL ;

WALKER, EJ ;

WALKER, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :218-229

[4] TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION MODE MOSFETS [J].

GAENSSLEN, FH ;

JAEGER, RC .

SOLID-STATE ELECTRONICS, 1979, 22 (04) :423-430

[5] TEMPERATURE-DEPENDENCE OF THE NONIDEAL COMPONENT OF BASE CURRENT IN MICROPOWER N-P-N TRANSISTORS [J].

GONZALEZBRIS, C ;

MUNOZ, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) :1503-1505

[6]

Hanamura S., 1983, 1983 Symposium on VLSI Technology. Digest of Technical Papers, P46

[7] MINIATURIZATION OF SI MOSFET AT 77-K [J].

KAMGAR, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) :1226-1228

[8]

Kato I., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P601

[9]

Keyes R. W., 1970, Proceedings of the IEEE, V58, P1914, DOI 10.1109/PROC.1970.8063

[10]

LEE DS, 1983, IEEE T ELECTRON DEV, V30, P626

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