ELECTRICAL AND OPTICAL PROPERTIES OF VAPOR-GROWN GAAS-SI

被引：6

作者：

KRESSEL, H

PHILIPSB.HV

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 05期

关键词：

D O I：

10.1063/1.1659195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2244 / &

共 11 条

[1] DISLOCATIONS AND PRECIPITATES IN GAAS INJECTION LASERS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) :1973-&

[2] EFFECT OF SUBSTRATE IMPERFECTIONS ON GAAS INJECTION LASERS PREPARED BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

NELSON, H ;

MCFARLANE, SH ;

ABRAHAMS, MS ;

LEFUR, P ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3587-+

[3] ELECTRICAL AND OPTICAL PROPERTIES OF N-TYPE SI-COMPENSATED GAAS PREPARED BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

NELSON, H .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3720-&

[4] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

DUNSE, JU ;

NELSON, H ;

HAWRYLO, FZ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :2006-&

[5] OBSERVATIONS CONCERNING RADIATIVE EFFICIENCY AND DEEP-LEVEL LUMINESCENCE IN N-TYPE GAAS PREPARED BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

HAWRYLO, FZ ;

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) :5139-&

[6] INJECTION LASER [J].

PILKUHN, MH .

PHYSICA STATUS SOLIDI, 1968, 25 (01) :9-+

[7] PHOTOLUMINESCENCE OF CU-DOPED GALLIUM ARSENIDE [J].

QUEISSER, HJ ;

FULLER, CS .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) :4895-&

[8] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J].

TIETJEN, JJ ;

AMICK, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :724-&

[9] AUGER RECOMBINATION IN GAAS [J].

WEISBERG, LR .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) :6096-&

[10] EVIDENCE FOR SELF-ACTIVATED LUMINESCENCE IN GAAS - GALLIUM VACANCY-DONOR CENTER [J].

WILLIAMS, EW .

PHYSICAL REVIEW, 1968, 168 (03) :922-&

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