PREMATURE FAILURE IN PT-GAAS IMPATTS - RECOMBINATION-ASSISTED DIFFUSION AS A FAILURE MECHANISM

被引：14

作者：

BALLAMY, WC ^{[1
]}

KIMERLING, LC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/T-ED.1978.19164

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：746 / 752

页数：7

共 13 条

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[3] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

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[7] NEW DEVELOPMENTS IN DEFECT STUDIES IN SEMICONDUCTORS [J].

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[8]

Lang D. V., 1975, Lattice Defects in Semiconductors, 1974, P581

[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[10] RECOMBINATION-ENHANCED ANNEALING OF E1 AND E2 DEFECT LEVELS IN 1-MEV-ELECTRON-IRRADIATED N-GAAS [J].

LANG, DV ;

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LEUNG, SY .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3587-3591

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