DIFFUSION OF PARAMAGNETIC DEFECTS IN AMORPHOUS-SILICON

被引：13

作者：

JACKSON, WB

TSAI, CC

THOMPSON, R

机构：

[1] Xerox Palo Alto Research Center, Palo Alto

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.64.56

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The diffusion coefficient of the dominant (g=2.0055) paramagnetic defect (D center) in amorphous silicon is determined to be less than half the diffusion coefficient for hydrogen. High-D-center densities are found to trap hydrogen. These results eliminate the possibility that the D center is responsible for hydrogen motion in hydrogenated amorphous silicon. © 1990 The American Physical Society.

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页码：56 / 59

页数：4

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