MBE-GROWN INGAALAS 1.5-MU-M MQW RIDGE-WAVE-GUIDE LASER-DIODES WITH ALAS ETCH STOP LAYERS

Ridge waveguide multiple quantum well laser diodes in which the ridge heights are predetermined by etch stop layers have been fabricated for the first time in InGaAlAs materials lattice-matched to InP. A 3 nm thick pseudomorphic AlAs layer forms the etch stop layer in these devices and the selective etching was performed by a succinic acid solution that etches InGaAs and InAlAs but not AlAs. With this technique, more reliable and uniform ridge stripe device fabrication is expected.