MBE-GROWN INGAALAS 1.5-MU-M MQW RIDGE-WAVE-GUIDE LASER-DIODES WITH ALAS ETCH STOP LAYERS

被引:4
作者
CHOI, WY
BROEKAERT, TPE
FONSTAD, CG
机构
[1] Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge
关键词
SEMICONDUCTOR LASERS; LASERS;
D O I
10.1049/el:19930323
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ridge waveguide multiple quantum well laser diodes in which the ridge heights are predetermined by etch stop layers have been fabricated for the first time in InGaAlAs materials lattice-matched to InP. A 3 nm thick pseudomorphic AlAs layer forms the etch stop layer in these devices and the selective etching was performed by a succinic acid solution that etches InGaAs and InAlAs but not AlAs. With this technique, more reliable and uniform ridge stripe device fabrication is expected.
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页码:483 / 485
页数:3
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