GROWTH MODE TRANSITION AND PHOTOLUMINESCENCE PROPERTIES OF SI1-XGEX/SI QUANTUM-WELL STRUCTURES WITH HIGH GE COMPOSITION

被引：77

作者：

SUNAMURA, H ^{[1
]}

SHIRAKI, Y ^{[1
]}

FUKATSU, S ^{[1
]}

机构：

[1] UNIV TOKYO,DEPT PURE & APPL SCI,MEGURO KU,TOKYO 153,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.113608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Correlation between growth mode transition and photoluminescence (PL) properties of Si1-xGex/Si quantum wells (QWs) with high Ge composition grown by gas-source molecular beam epitaxy is investigated. With increasing Ge composition in the QWs, significant deviation from the theoretical calculation is observed for x>0.4 in the emission energy and the activation energy obtained from the temperature dependence of integrated PL intensity. Transmission electron microscopy reveals emergence of islands for x>0.4, implying strong correlation with the anomalous PL properties. Observed PL properties are shown to be well explained by the breakdown of two-dimensional growth. An attempt to grow luminescent QWs with flat interfaces is also presented.© 1995 American Institute of Physics.

引用

页码：953 / 955

页数：3

共 17 条

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