EFFECTS OF THERMAL NITRIDATION ON THE TRAPPING CHARACTERISTICS OF SIO2-FILMS

被引：50

作者：

YANKOVA, A ^{[1
]}

THANH, LD ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] AACHEN TECH UNIV,INST SEMICOND ELECTR,AACHEN,FED REP GER

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 09期

关键词：

D O I：

10.1016/0038-1101(87)90130-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

28

引用

收藏

页码：939 / 946

页数：8

相关论文

共 28 条

[1] Aslam M., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P103
[2] ASLAM M, 1984, SOLID STATE ELECTRON, V27, P709
[3] CAPTURE AND TUNNEL EMISSION OF ELECTRONS BY DEEP LEVELS IN ULTRATHIN NITRIDED OXIDES ON SILICON
CHANG, ST
JOHNSON, NM
LYON, SA
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 316 - 318
[4] TRAPPING EFFECTS IN THIN OXYNITRIDE LAYERS IN METAL-INSULATOR-SEMICONDUCTOR DEVICES
FAIGON, A
SHAPPIR, J
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) : 4633 - 4637
[5] FERRY FL, 1985, J APPL PHYS, V57, P2036
[6] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS
GRUNTHANER, FJ
GRUNTHANER, PJ
MASERJIAN, J
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1462 - 1466
[7] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS
HABRAKEN, FHPM
KUIPER, AET
TAMMINGA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6996 - 7002
[8] TIME-DEPENDENT COMPOSITIONAL VARIATION IN SIO2-FILMS NITRIDED IN AMMONIA
HAN, CJ
MOSLEHI, MM
HELMS, CR
SARASWAT, KC
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 641 - 643
[9] RETARDATION OF DESTRUCTIVE BREAKDOWN OF SIO2-FILMS ANNEALED IN AMMONIA GAS
ITO, T
ARAKAWA, H
NOZAKI, T
ISHIKAWA, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) : 2248 - 2251
[10] ITO T, 1982, IEEE T ELECTRON DEV, V29, P494