PLASMA PROCESSING EFFECTS ON O-2-HCL GROWN SI-SIO2 STRUCTURES

被引：12

作者：

KASSABOV, J ^{[1
]}

ATANASSOVA, E ^{[1
]}

GORANOVA, E ^{[1
]}

DIMITROV, D ^{[1
]}

VASILEVA, J ^{[1
]}

机构：

[1] INST MICROELECTR,BU-1184 SOFIA,BULGARIA

来源：

关键词：

D O I：

10.1016/0038-1101(89)90109-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：535 / 540

页数：6

共 21 条

[1] RELATIVE IMPORTANCE OF PHONON SCATTERING TO CARRIER MOBILITY IN SI SURFACE-LAYER AT ROOM-TEMPERATURE
CHENG, YC
SULLIVAN, EA
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) : 3619 - 3625
[2] EFFECT OF COULOMB SCATTERING ON SILICON SURFACE MOBILITY
CHENG, YC
SULLIVAN, EA
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 187 - 192
[3] CHUNG Y, 1983, J VAC SCI TECHNOL, P799
[4] DIMITROV D, 1985, PHYSICAL PROBLEMS MI, P542
[5] Kassabov J., 1987, Microelectronics Journal, V18, P21, DOI 10.1016/S0026-2692(87)80405-6
[6] ARGON PLASMA TREATMENT EFFECTS ON SI-SIO2 STRUCTURES
KASSABOV, J
ATANASSOVA, E
DIMITROV, D
GORANOVA, E
[J]. SOLID-STATE ELECTRONICS, 1988, 31 (02) : 147 - 154
[7] EFFECTS OF HYDROGEN PLASMA ON THIN-OXIDE SI-SIO2 STRUCTURES
KASSABOV, J
ATANASSOVA, E
DIMITROV, D
VASILEVA, J
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (07) : 686 - 690
[8] INVESTIGATION OF THE SI-SIO2 INTERFACE BY SURFACE INVERSION CURRENTS
KASSABOV, J
DIMITROV, D
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (04) : 477 - 482
[9] KASSABOV J, IN PRESS THIN SOLID
[10] KASSABOV J, 1986, MICROELECTRON J, V18, P5