ARGON PLASMA TREATMENT EFFECTS ON SI-SIO2 STRUCTURES

被引：15

作者：

KASSABOV, J ^{[1
]}

ATANASSOVA, E ^{[1
]}

DIMITROV, D ^{[1
]}

GORANOVA, E ^{[1
]}

机构：

[1] INST MICROELECTR,BU-1184 SOFIA,BULGARIA

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 02期

关键词：

D O I：

10.1016/0038-1101(88)90122-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：147 / 154

页数：8

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