INVESTIGATION OF THE SI-SIO2 INTERFACE BY SURFACE INVERSION CURRENTS

被引：7

作者：

KASSABOV, J

DIMITROV, D

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 04期

关键词：

D O I：

10.1016/0038-1101(86)90097-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：477 / 482

页数：6

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