CARRIER MOBILITY IN INVERSION-LAYERS AND RF-PLASMA INDUCED RADIATION DEFECTS AT THE SI-SIO2 INTERFACE

被引：11

作者：

KASSABOV, J ^{[1
]}

ATANASSOVA, E ^{[1
]}

GORANOVA, E ^{[1
]}

机构：

[1] INST MICROELECTR,SOFIA 1184,BULGARIA

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 01期

关键词：

D O I：

10.1016/0038-1101(84)90087-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：13 / 19

页数：7

相关论文

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