IMPACT IONIZATION IN BULK GAAS HIGH FIELD DOMAIN

被引：9

作者：

BOHN, PP

HERSKOWITZ, GJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 01期

关键词：

D O I：

10.1109/T-ED.1972.17365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：14 / +

页数：1

共 28 条

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FAWCETT, W ;

REES, HD .

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[2] A NONSATURATING VELOCITY-FIELD APPROXIMATION FOR IMPROVED INVARIANT DOMAIN ANALYSIS OF GUNN EFFECT DEVICES [J].

BOHN, PP .

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BUTCHER, PN ;

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BUTCHER, PN ;

FAWCETT, W .

BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (11) :1425-&

[5] EFFECT OF FIELD-DEPENDENT DIFFUSION ON STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].

BUTCHER, PN ;

FAWCETT, W ;

OGG, NR .

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[6] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J].

BUTCHER, PN ;

FAWCETT, W .

PHYSICS LETTERS, 1966, 21 (05) :489-&

[7] STRAPPING ANALYSIS IN GALLIUM ARSENIDE [J].

CARBALLES, JC ;

LEBAILLY, J .

SOLID STATE COMMUNICATIONS, 1968, 6 (03) :167-+

[8] SIMPLE MODEL FOR ELECTRON-HOLE GENERATION AND SWITCHING MECHANISMS IN NTYPE-GAAS DIODES [J].

CHRISTENSSON, S ;

LUNDSTROM, I ;

MARKLUND, I ;

JEPPSSON, B .

ELECTRONICS LETTERS, 1967, 3 (11) :507-+

[9] ELECTRON-HOLE GENERATION IN GAAS [J].

CONWELL, EM .

APPLIED PHYSICS LETTERS, 1966, 9 (10) :383-+

[10] SWITCHING AND LOW-FIELD BREAKDOWN IN N-GAAS BULK DIODES [J].

COPELAND, JA .

APPLIED PHYSICS LETTERS, 1966, 9 (04) :140-+

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