DEVICE MODEL FOR BURIED-CHANNEL CCDS AND MOSFETS WITH GAUSSIAN IMPURITY PROFILES

被引：21

作者：

TAYLOR, GW ^{[1
]}

CHATTERJEE, PK ^{[1
]}

CHAO, HH ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,ADV COMPONENTS LAB,DALLAS,TX 75265

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 01期

关键词：

D O I：

10.1109/T-ED.1980.19840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：199 / 208

页数：10

共 11 条

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MYLROIE, S .

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[4]

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TAYLOR, GW .

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[6] CHARACTERISTICS OF A DEPLETION-TYPE IGFET [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (05) :513-514

[7] ACCURATE MODEL FOR A DEPLETION MODE IGFET USED AS A LOAD DEVICE [J].

RAO, GRM .

SOLID-STATE ELECTRONICS, 1978, 21 (05) :711-714

[8] DC AND HIGH-FREQUENCY CHARACTERISTICS OF BUILT-IN CHANNEL MOS-FETS [J].

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DAS, MB .

SOLID-STATE ELECTRONICS, 1978, 21 (03) :495-505

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[10]

TAYLOR GS, UNPUBLISHED

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