PHOTOLUMINESCENCE STUDIES IN STRAINED INAS/INP QUANTUM-WELLS GROWN BY HYDRIDE VAPOR-PHASE EPITAXY

被引：5

作者：

DISSEIX, P

LEYMARIE, J

VASSON, A

VASSON, AM

BANVILLET, H

GIL, E

PIFFAULT, N

CADORET, R

机构：

[1] Lab. de Phys. des Milieux Condenses, Univ. Blaise Pascal Clermont Ferrand II, Aubiere

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 08期

关键词：

D O I：

10.1088/0268-1242/8/8/030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained InAs/InP single quantum wells grown by hydride vapour phase epitaxy have been investigated by photoluminescence. The evolution of the spectra when the temperature is varied above 5K is analysed in particular. At temperatures larger than approximately 150 K, a signal is generally detected at an energy higher than that of the heavy exciton (e1hh1) peak which is still observed. It is interpreted as being due to the recombination of conduction band electrons in the InP barriers with heavy holes in the InAs well (e(c)hh1). A value of 0.48 +/- 0.02 eV is determined for the strained valence band offset from the fit of a simple single-band model to both the e1hh1 and e(c)hh1 transition energies.

引用

页码：1666 / 1670

页数：5

共 29 条

[1] OPTIMIZED TIGHT-BINDING VALENCE BANDS AND HETEROJUNCTION OFFSETS IN STRAINED III-V SEMICONDUCTORS [J].