HOLE GENERATION WITHOUT ANNEALING IN HIGH-DOSE BORON-IMPLANTED SILICON - HEAVY DOPING BY B-12 ICOSAHEDRON AS A DOUBLE ACCEPTOR

被引：34

作者：

MIZUSHIMA, I ^{[1
]}

MURAKOSHI, A ^{[1
]}

WATANABE, M ^{[1
]}

YOSHIKI, M ^{[1
]}

HOTTA, M ^{[1
]}

KASHIWAGI, M ^{[1
]}

机构：

[1] TOSHIBA CO LTD,CTR RES & DEV,ENVIRONM ENGN LAB,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期

关键词：

BORON; ION IMPLANTATION; HOLE; ACTIVATION; CARRIER CONCENTRATION; XPS; FTIR;

D O I：

10.1143/JJAP.33.404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high hole concentration region of about 1 x 10(21) cm(-3) was generated without any post-annealing by the implantation of high doses of boron into silicon substrates. X-ray photoelectron spectroscopy (XPS) measurement and Fourier transform IR spectroscopy (FTIR) absorption spectra revealed that B-12 icosahedra were created in as-implanted samples. A new model of the generation of holes is proposed in which B-12 icosahedron acts as a double acceptor.

引用

页码：404 / 407

页数：4

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