DIELECTRIC-PROPERTIES OF CHEMICALLY VAPOUR-DEPOSITED SI3N4

被引：31

作者：

GOTO, T

HIRAI, T

机构：

来源：

JOURNAL OF MATERIALS SCIENCE | 1989年 / 24卷 / 03期

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D O I：

10.1007/BF01148763

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：821 / 826

页数：6

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[8] Cohen M. H., 1970, Journal of Non-Crystalline Solids, V4, P391, DOI 10.1016/0022-3093(70)90068-2
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