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DIELECTRIC-PROPERTIES OF CHEMICALLY VAPOUR-DEPOSITED SI3N4
被引:31
作者
:
GOTO, T
论文数:
0
引用数:
0
h-index:
0
GOTO, T
HIRAI, T
论文数:
0
引用数:
0
h-index:
0
HIRAI, T
机构
:
来源
:
JOURNAL OF MATERIALS SCIENCE
|
1989年
/ 24卷
/ 03期
关键词
:
D O I
:
10.1007/BF01148763
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:821 / 826
页数:6
相关论文
共 33 条
[1]
ANDREEVA TV, 1967, TEPLOFIZ VYS TEMP, V5, P612
[2]
ASAI K, 1977, DENKI BUSSEI, P408
[3]
ASAI K, 1977, DENKI BUSSEI, P430
[4]
POLARONS IN CRYSTALLINE AND NON-CRYSTALLINE MATERIALS
AUSTIN, IG
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, University of Sheffield
AUSTIN, IG
MOTT, NF
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, University of Sheffield
MOTT, NF
[J].
ADVANCES IN PHYSICS,
1969,
18
(71)
: 41
-
+
[5]
SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
BEAN, KE
论文数:
0
引用数:
0
h-index:
0
BEAN, KE
GLEIM, PS
论文数:
0
引用数:
0
h-index:
0
GLEIM, PS
YEAKLEY, RL
论文数:
0
引用数:
0
h-index:
0
YEAKLEY, RL
RUNYAN, WR
论文数:
0
引用数:
0
h-index:
0
RUNYAN, WR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(07)
: 733
-
&
[6]
PROPERTIES OF SIXOYNZ FILMS ON SI
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
BROWN, DM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
GRAY, PV
HEUMANN, FK
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
HEUMANN, FK
PHILIPP, HR
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
PHILIPP, HR
TAFT, EA
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
TAFT, EA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 311
-
&
[7]
ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
论文数:
0
引用数:
0
h-index:
0
BROWN, GA
ROBINETT.WC
论文数:
0
引用数:
0
h-index:
0
ROBINETT.WC
CARLSON, HG
论文数:
0
引用数:
0
h-index:
0
CARLSON, HG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(09)
: 948
-
&
[8]
Cohen M. H., 1970, Journal of Non-Crystalline Solids, V4, P391, DOI 10.1016/0022-3093(70)90068-2
[9]
Dispersion and absorption in dielectrics I. Alternating current characteristics
Cole, KS
论文数:
0
引用数:
0
h-index:
0
机构:
Columbia Univ, Dept Physiol, New York, NY USA
Cole, KS
Cole, RH
论文数:
0
引用数:
0
h-index:
0
机构:
Columbia Univ, Dept Physiol, New York, NY USA
Cole, RH
[J].
JOURNAL OF CHEMICAL PHYSICS,
1941,
9
(04)
: 341
-
351
[10]
ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
FLEMING, PJ
论文数:
0
引用数:
0
h-index:
0
FLEMING, PJ
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 300
-
&
←
1
2
3
4
→
共 33 条
[1]
ANDREEVA TV, 1967, TEPLOFIZ VYS TEMP, V5, P612
[2]
ASAI K, 1977, DENKI BUSSEI, P408
[3]
ASAI K, 1977, DENKI BUSSEI, P430
[4]
POLARONS IN CRYSTALLINE AND NON-CRYSTALLINE MATERIALS
AUSTIN, IG
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, University of Sheffield
AUSTIN, IG
MOTT, NF
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, University of Sheffield
MOTT, NF
[J].
ADVANCES IN PHYSICS,
1969,
18
(71)
: 41
-
+
[5]
SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
BEAN, KE
论文数:
0
引用数:
0
h-index:
0
BEAN, KE
GLEIM, PS
论文数:
0
引用数:
0
h-index:
0
GLEIM, PS
YEAKLEY, RL
论文数:
0
引用数:
0
h-index:
0
YEAKLEY, RL
RUNYAN, WR
论文数:
0
引用数:
0
h-index:
0
RUNYAN, WR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(07)
: 733
-
&
[6]
PROPERTIES OF SIXOYNZ FILMS ON SI
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
BROWN, DM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
GRAY, PV
HEUMANN, FK
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
HEUMANN, FK
PHILIPP, HR
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
PHILIPP, HR
TAFT, EA
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
TAFT, EA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 311
-
&
[7]
ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
论文数:
0
引用数:
0
h-index:
0
BROWN, GA
ROBINETT.WC
论文数:
0
引用数:
0
h-index:
0
ROBINETT.WC
CARLSON, HG
论文数:
0
引用数:
0
h-index:
0
CARLSON, HG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(09)
: 948
-
&
[8]
Cohen M. H., 1970, Journal of Non-Crystalline Solids, V4, P391, DOI 10.1016/0022-3093(70)90068-2
[9]
Dispersion and absorption in dielectrics I. Alternating current characteristics
Cole, KS
论文数:
0
引用数:
0
h-index:
0
机构:
Columbia Univ, Dept Physiol, New York, NY USA
Cole, KS
Cole, RH
论文数:
0
引用数:
0
h-index:
0
机构:
Columbia Univ, Dept Physiol, New York, NY USA
Cole, RH
[J].
JOURNAL OF CHEMICAL PHYSICS,
1941,
9
(04)
: 341
-
351
[10]
ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
FLEMING, PJ
论文数:
0
引用数:
0
h-index:
0
FLEMING, PJ
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 300
-
&
←
1
2
3
4
→